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| BA592/BA892... Silicon RF Switching Diode For band switching in TV/VTR tuners and mobile applications small capacitance 1 Very low forward resistance (typ. 0.45 @ 3 mA) BA892, BA892-02V BA892-02L 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 BA592 BA592 BA892/-02L BA892-02V 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323 SCD80 TSLP-2-1 SC79 Configuration single single single, leadless single LS(nH) 1.8 0.6 0.4 0.6 Marking blue S AA AA A Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 35 100 150 -55 ... 125 -55 ... 150 Unit V mA C VR IF Tj Top Tstg Value 135 120 70 Unit K/W Feb-04-2003 BA592/BA892... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 0 V, f = 100 MHz Reverse parallel resistance VR = 0 V, f = 100 MHz IF = 3 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, measured at IR = 3mA, I-region width Insertion loss1) IF = 0.1 mA, f = 1 GHz IF = 3 mA, f = 1 GHz IF = 10 mA, f = 1 GHz Isolation1) VR = 0 V, f = 100 MHz VR = 0 V, f = 470 MHz VR = 0 V, f = 1 GHz 1BA892-02L Symbol min. IR VF - Values typ. max. 20 1 Unit nA V CT 0.65 0.6 RP rf rr pF 0.92 0.85 1 100 1.4 1.1 k - 0.45 0.36 120 0.7 0.5 - RL = 100 in series configuration, Z = 50 2 Charge carrier life time - WI |S21|2 - 3 -0.1 -0.05 -0.04 -23.5 -10.5 -5.5 - |S21|2 - Feb-04-2003 ns m dB Forward resistance BA592/BA892... Diode capacitance CT = f = Parameter 2 10 3 KOhm 100 MHz pF 10 2 CT 1.2 Rp 10 1 0.8 1 MHz ... 1 GHz 1 GHz 10 0 0.4 0 0 5 10 15 20 V 30 10 -1 0 5 10 15 20 V VR f = 100MHz 10 2 TA = Parameter 10 0 A Ohm 10 -1 10 1 10 -2 IF rf 10 -3 10 0 10 -4 10 -5 10 -1 10 -2 10 -1 10 0 10 1 mA 10 2 10 -6 0 0.2 0.4 IF 3 Forward resistance rf = (I F) Forward current IF = (VF) -40 C 25 C 85 C 125 C 0.6 0.8 V Feb-04-2003 (VR ) Reverse parallel resistance RP = (VR ) f = Parameter 30 VR 1.2 VF BA592/BA892... Insertion loss |S21 |2 = (f) IF = Parameter 0 VR = Paramter 0 BA892-02L in series configuration, Z = 50 BA892-02L in series configuration, Z = 50 dB dB |S21|2 |S21|2 -10 -0.2 10 mA 3 mA 1 mA 0.1 mA -15 -20 -0.3 -25 -0.4 0 0.5 1 1.5 2 GHz 3 -30 0 0.5 1 f 4 Isolation |S21 |2 = (f) 0V 1V 10 V 1.5 2 GHz 3 f Feb-04-2003 |
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